1: source 1 2: gate 1 7,8: drain 1 3: source 2 4: gate 2 5,6: drain 2 features trench technology ultra low on-resistance dual p-channel mosfet low profile (<1.8mm) available in tape & reel absolute maximum ratings ta = 25 parameter symbol rating unit drain- source voltage v ds -12 v continuous drain current, v gs @ -4.5v @ t a =25 i d -7.8 continuous drain current, v gs @ -4.5v @ t a =70 i d -6.2 pulsed drain current *1 i dm -39 power dissipation *2 @t a =25 p d 2.0 w power dissipation *2 @t a =70 p d 1.3 w linear derating factor 16 w/ gate-to-source voltage v gs 8.0 v junction and storage temperature range t j ,t stg -55to+150 junction-to-drain lead r jl 20 /w maximum junction-to-ambient *2 r ja 62.5 /w *1 repetitive rating; pulse width limited by max. junction temperature. *2 when mounted on 1 inch square copper board. a 4008-318-123 sales@twtysemi.com 1 of 2 http://www.twtysemi.com KRF7325 product specification
electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain-to-source breakdown voltage v (br)dss v gs =0v,i d = -250 a -12 v breakdown voltage temp. coefficient v(br)dss / t j i d = -1ma,reference to 25 0.007 v/ v gs =-4.5v,i d = -7.8a*1 24 v gs =-2.5v,i d = -6.2a*1 33 v gs =-1.8v,i d = -3.9a*1 49 gate threshold voltage v gs(th) v ds =v gs ,i d = -250 a -0.40 -0.90 v forward transconductance g fs v ds = -10v, i d = -7.8a*1 17 s v ds =-9.6v,v gs =0v -1.0 v ds =-9.6v,v gs =0v,t j =70 -25 gate-to-source forward leakage v gs = -8.0v -100 gate-to-source reverse leakage v gs = 8.0v 100 total gate charge q g i d = -7.8a 22 33 gate-to-source charge q gs v ds = -6.0v 5.0 7.5 gate-to-drain ("miller") charge q gd v gs = -4.5v 4.7 7.0 turn-on delay time t d(on) v dd =-6.0v,v gs =-4.5v 9.4 rise time t r i d = -1.0a 9.8 turn-off delay time t d(off) r g =6 240 fall time t f 180 input capacitance c iss v gs = 0v 2020 output capacitance c oss v ds = -10v 520 reverse transfer capacitance c rss f = 1.0mhz 330 continuous source current body diode) i s -2.0 pulsed source current body diode) *2 i sm -39 diode forward voltage v sd t j =25 ,i s =-2.0a,v gs =0v*1 -1.2 v reverse recovery time t rr t j =25 ,i f =-2.0a 36 54 ns reverse recoverycharge q rr d i /d t = -100a/ s*1 28 42 nc *1 pulse width 400 s; duty cycle 2%. *2 repetitive rating; pulse width limited by max. junction temperature. r ds(on) static drain-to-source on-resistance m pf i dss ns drain-to-source leakage current a a i gss na nc KRF7325 4008-318-123 sales@twtysemi.com 2 of 2 http://www.twtysemi.com product specification
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